Sidewall Transfer Process and Selective Gate Sidewall Spacer Formation Technology for Sub-15nm FinFET with Elevated Source/Drain Extension

摘要

We present the FinFET process integration technology including improved sidewall transfer (SWT) process applicable to both fins and gates. Using this process, the uniform electrical characteristics of the ultra-small FinFETs of 15nm gate length and 10nm fin width have been demonstrated. A new process technique for the selective gate sidewall spacer formation (spacer formation only on the gate sidewall, no spacer on the fin sidewall) is also demonstrated for realizing low-resistance elevated source/drain (S/D) extension.