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Electromigration behavior of Sn3.0Ag0.5Cu/Sn58Bi structural composite solder interconnect

机译:Sn3.0Ag0.5Cu / Sn58Bi结构复合焊料互连的电迁移行为

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The microstructure and electromigration of Bi and Sn in Cu/Sn58Bi/Cu and Cu/Sn58Bi /Sn3.0Ag0.5Cu/ Sn58Bi/Cu structural composite solder joint, were researched under the current density of 1.0×104 A/cm2 at room temperature. Two kinds of solder joints changed their morphology at both anode sides and cathode sides after current stressing. Bi layer was formed in the anode side while Sn layer was formed in the cathode side. The microanalysis indicated that Bi was the major diffusion element from cathode to anode and the migration of atomic Bi was faster than atomic Sn. Furthermore, through the comparison of two kinds of solder joints, it was easy to find that Sn3.0Ag0.5Cu suppressed the migration of atomic Bi and atomic Sn during electromigration.
机译:研究了室温下1.0×104 A / cm2电流密度下Bi和Sn在Cu / Sn58Bi / Cu和Cu / Sn58Bi / Sn3.0Ag0.5Cu / Sn58Bi / Cu结构复合焊点中的微观结构和电迁移。电流应力后,两种焊点在阳极侧和阴极侧均改变了其形态。在阳极侧形成Bi层,而在阴极侧形成Sn层。微观分析表明,Bi是从阴极到阳极的主要扩散元素,原子Bi的迁移快于原子Sn。此外,通过比较两种焊点,很容易发现Sn3.0Ag0.5Cu抑制了电迁移过程中原子Bi和原子Sn的迁移。

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