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AN ultra-low cost deep reactive ion etching (drie) tool for flexible, small volume manufacturing

机译:一种超低成本的深度反应离子刻蚀(drie)工具,用于灵活,小批量的制造

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Our goal is to demonstrate that we can achieve a radical reduction in the capital cost of microano-manufacturing without sacrificing performance by scaling production throughput. As a demonstration of this concept, we show for the first time a DRIE system that processes small substrates (∼1 in) with performance comparable to commercial systems for a capital cost below $32K. We have designed, built and tested this system, which currently can achieve silicon etch rates up to 2.8 µm/min with vertical sidewall profiles, an estimated photoresist selectivity greater than 50∶1, and etch depth non-uniformity to less than 2% across the substrate.
机译:我们的目标是证明,通过规模化生产吞吐量,可以在不牺牲性能的前提下,从根本上降低微/纳米制造的资本成本。为了说明这一概念,我们首次展示了一种DRIE系统,该系统能够以低于$ 32K的资本成本处理性能与商业系统相媲美的小型基板(〜1英寸)。我们已经设计,建造和测试了该系统,该系统目前可实现垂直侧壁轮廓的硅刻蚀速率高达2.8 µm / min,估计的光致抗蚀剂选择性大于50∶1,并且刻蚀深度不均匀度在整个范围内小于2%基板。

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