Intravascular pressure devices incorporating sensors manufactured using deep reactive ion etching

摘要

An intravascular pressure sensor assembly is disclosed herein that is produced in part using photolithography and DRIE solid-state device production processes. Using DRIE production processes facilitates a number of features that could not be readily incorporated in sensor chips fabricated using mechanical saws. In accordance with a first feature, sensor chips are created with non-rectangular outlines. The sensor chip includes a widened portion that substantially abuts an inner wall of a sensor housing, and a cantilevered portion that is relatively narrow in relation to the widened portion. The non-rectangular outline of the sensor chip is formed using photolithography in combination with DRIE processing. In accordance with another feature, the sensor chip is positioned width-wise in the housing, thereby reducing a required length for the housing. In accordance with yet another feature, the sensor chip comprises one or more cutouts for receiving signal wires for connection to signal lead lines on the sensor chip. The outline of the sensor chip and the cutouts are formed using photolithography in combination with DRIE processing.