A general and reliable model for GaN HEMTs on Si and SiC substrates

摘要

In this paper a reliable and cost-effective modeling approach for GaN HEMT on both Si and SiC substrates is presented. The developed model is validated in terms of small-and large-signal simulations for 2-mm GaN-on-Si and 1-mm GaN-on-SiC HEMTs.