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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散

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Yu-Chun Huang; Hsien-Chin Chiu; Hsuan-Ling Kao; Hsiang-Chun Wang; Chia-Hao Liu; Chong-Rong Huang; Si-Wen Chen;
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1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications [J] . Fleury Clement, Capriotti Mattia, Rigato Matteo, Microelectronics & Reliability . 2015,第9a10期

机译：用于功率应用的SiC和Si衬底上常关p-GaN栅极AlGaN / GaN HEMT的高温性能
3. Thermal characterization of DC and small-signal parameters of 150nm and 250nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate [J] . Alim Mohammad A., Rezazadeh Ali A., Gaquiere Christophe Semiconductor science and technology . 2015,第12期

机译：SiC衬底上生长的150nm和250nm栅长AlGaN / GaN HEMT的直流热特性和小信号参数
4. The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates [J] . M. Gassoumi, M.M. Ben Salem, S. Saadaoui, Microelectronic Engineering . 2011,第4期

机译：栅极长度变化和陷阱效应对SiC衬底上AlGaN / GaN HEMT的瞬态响应的影响
5. Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements [C] . A. K. Sahoo, N. K. Subramani, J-C. Nallatamby, European Microwave Integrated Circuits Conference . 2016

机译：通过TCAD模拟和测量对在Si和SiC衬底上生长的AlN / GaN / AlGaN HEMT进行热分析
6. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
7. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
8. Thermal effect on dynamic R_on degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates [O] . Manqing Hu, Gengxin Liu, E Du, 2020

机译：动态R _{对SIC基材P-GaN Algan / GaN Hemts降解的动态R _的热效应}

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

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