Analysis of fin height on FinFET SRAM cell hardening

摘要

Radiation soft reliability is showing a declining with technology scaling. Because of this new techniques are required to add resilience to the chips. In this work, we analyze the impact of channel width modulation of FinFET SRAM cell transistors by increasing the fin height of FinFET transistor on FinFET SRAM cell hardening. TCAD simulations of the memory cell are carried-out. Results are presented for a 10nm-SOI Tri-Gate FinFET technology. We show that increasing the fin height of FinFET SRAM cell transistors, may not be effective to improve SRAM cell hardening to heavy ions.