Power noise isolation in a silicon interposer with through silicon vias

摘要

In this paper, we present a new structure of a power distribution network (PDN) in silicon interposers with through silicon vias (TSVs) to suppress the high-frequency power/ground noise including simultaneous switching noise. The proposed PDN structure employs the resonant structure consisting of metal patterns and TSVs. To examine the effect of design parameters of the resonant structure on noise suppression characteristics, we present Bloch analysis based on a phase of Bloch impedance and Floquet's theorem. Simulation results show a good correlation between Bloch analysis and a full-wave simulation. Power noise isolation of the proposed PDN structure is verified using full-wave simulations.