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Effect of Metal Finishing Fabricated by Electro and Electro-less Plating Process on Reliability Performance of 30μm-Pitch Solder Micro Bump Interconnection

机译:金属精加工通过电镀和电镀工艺制造的效果对30μm - 间距焊料微凸块互连的可靠性性能

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Recently, three dimensional integration circuits technology has received much attention because of the demands of gradually increasing functionality and performance in microelectronic packaging for different types of electronic devices. For 3D chip stacking, high density interconnections are required in high-performance electronic products. Though the bumping process used could be either electroplating or electro-less plating for fine pitch solder micro bumps, its process effect on the reliability performances of micro joints still needs to be clarified from the microstructural point of view, especially for the fine pitch solder micro bump interconnections. In this study, we discussed the effect of Ni/Au metal finishing fabricated by electro- and electro-less plating on the reliability properties of 30μm-pitch lead-free solder micro interconnections. Palladium layer was chosen to evaluate its influence on the reliability response of fine-pitch solder micro joints with electro-less Ni/Au surface finishing. The chip-to-chip test vehicle having more than 3000 solder micro bumps with a bump pitch of 30μm was used in this study. Two types of metal finishing, electroplating Ni/Au and electro-less plating Ni/Pd/Au, were chosen and fabricated on the silicon carrier. In silicon carrier, the thickness of Ni layer was 2~3 μm while that of electroplating and electro-less plating Au layer was 0.5μm and 0.02pm respectively. The thickness of Pd layer within the electroless Ni/Pd/Au structure was 0.05-0. 1μm. The silicon chip with a solder micro bump structure of Cu/Ni/SnAg having a thickness of 5μm/3pm/5μm was used for C2C bonding. We adopted the fluxless thermocompression process for both types of micro joints and then the chip stack was assembled by capillary-type underfill. Temperature cycling test (TCT) and electromigration test (EM) were conducted to assess the effect of metal finishing on the reliability properties of those solder micro bump interconnections. The reliability results revealed that the thickness of Au layer would apparently influence the microstructure evolution within the solder micro bump interconnection after bonding process though the micro joints with thick Au layer could pass the 1000 cycles TCT. The micro joints with complicated interface reaction resulted from the thicker Au layer might lead a negative effect on the long-term reliability properties while the Pd layer would enhance the wetting ability of solder micro bump during joining. The results of EM reliability test displayed that both types of the micro joints had excellent electromigration resistance under the testing condition of 0.08A/150°C. The activated IMC growth within the micro joint during EM testing was the major reason for this superior property. This investigated completely presented the effect of metal finishing by electro- and electroless bumping processes on the reliability properties of fine pitch solder micro bump joints.
机译:最近,三维集成电路技术已经受到了很多关注,因为对不同类型的电子设备的微电子包装中的功能和性能逐渐增加的功能和性能。对于3D芯片堆叠,高性能电子产品需要高密度互连。虽然所使用的凸块工艺可以是用于细间距焊料微凸块的电镀或电镀电镀,但是其对微关节可靠性性能的工艺效果仍然需要从微观结构的角度澄清,特别是对于细间距焊接微型凹凸互连。在这项研究中,我们讨论了通过电气和电镀镀层制造的Ni / Au金属精加工对30μm - 间距无铅焊料微互连的可靠性特性的影响。选择钯层以评估其对细间距焊接微关节的可靠性响应与电少的Ni / Au表面精加工的影响。在本研究中使用了具有超过3000焊料微凸块的芯片到芯片的测试车辆,在该研究中使用了凸块间距30μm。选择和制造在硅载体上选择两种类型的金属精加工,电镀Ni / Au和电较低的电镀Ni / Pd / Au。在硅载体中,Ni层的厚度为2〜3μm,而电镀和电镀的电镀Au层的厚度分别为0.5μm和0.02pm。电镀Ni / Pd / Au结构内Pd层的厚度为0.05-0。 1μm。具有厚度为5μm/ 3pm /5μm的Cu / Ni / snag的焊料微凸块结构的硅芯片用于C2C键合。我们采用了两种类型的微关节,然后通过毛细血管型底部填充组装芯片堆叠的浮动热压过程。进行温度循环试验(TCT)和电迁移试验(EM)以评估金属精加工对焊料微凸块互连的可靠性特性的影响。可靠性结果显示,虽然具有厚Au层的微关节可以通过1000个循环Tct,但Au层的厚度显然会影响粘接过程后的焊接微凸块互连内的微观结构演变。具有较厚的AU层产生的具有复杂界面反应的微关节可能对长期可靠性特性产生负面影响,而PD层将在接合过程中增强焊料微凸块的润湿能力。 EM可靠性测试的结果显示,两种类型的微接头在0.08A / 150°C的测试条件下具有优异的电渗透性。 EM测试期间微关节内的活化的IMC生长是这种优越性的主要原因。通过电气和化学凸起过程,这将通过电气和化学抵抗力的方法完全介绍了金属精加工的效果。

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