METAL INTERCONNECTION, FABRICATING METHOD THEREOF, IMAGE DEVICE INCLUDING METAL INTERCONNECTION AND FABRICATING METHOD THEREOF TO IMPROVE PERFORMANCE OF CMOS IMAGE SENSOR WITH HIGH LIGHT TRANSMISSION

摘要

PURPOSE: A metal interconnection is provided to improve performance of a CMOS(complementary metal oxide semiconductor) image sensor with high light transmission by making an interconnection formed of copper and by making an etch stop layer formed of an aluminium oxide layer with high light transmission in a copper damascene process. CONSTITUTION: The first insulation layer having at least one of the first concave part is formed on a substrate(10). The first concave part is filled with the first metal pattern. A diffusion barrier layer avoids the diffusion of a metal material of the first metal pattern, made of aluminium oxide and formed on the first insulation layer and the first metal pattern. The second insulation layer is formed on the diffusion barrier layer, having the second concave part exposing the upper surface of the first metal pattern. The second concave part is filled with the second metal pattern.