Surface passivation of InGaAs/InP beterostructures using UV-irradiation and ozone

摘要

The effects of dielectric films (SiO/sub 2/, Si/sub 3/N/sub 4/), chemical treatments and UV-ozone on InP and InGaAs surfaces have been investigated. We shown that an additional UV-ozone sequence, before PECVD (plasma enhanced chemical vapor deposition) dielectric deposition, is essential to prevent the typical degradation of electrical characteristics observed in InGaAs/InP heterostructure bipolar transistors (HBTs). Compared with untreated HBTs, the UV-ozone treated devices show good improvement of the low frequency noise and HBT current gain at low currents.