Growth of TlInGaAs on InP by gas source MBE

摘要

TlInGaAs quaternary layers are, for the first time, grown on InP substrates by gas source MBE. This new semiconductor material system was recently proposed by us for long wavelength optical devices as well as temperature insensitive wavelength laser diodes. During the growth, RHEED pattern shows (2/spl times/2) reconstructions. X-ray diffraction measurement shows the successful growth of TIInGaAs. PL emission is observed and their temperature variation of PL peak energy is observed to be small.