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GaN selective growth on SiC substrates by ammonia-source MBE
GaN selective growth on SiC substrates by ammonia-source MBE
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机译:氨源MBE在SiC衬底上进行GaN选择性生长
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摘要
A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.
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