GAN SELECTIVE GROWTH ON SIC SUBSTRATES BY AMMONIA-SOURCE MBE

摘要

A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrat e by molecular beam epitaxy (MBE) such that growth occurs selectively over the se ed layer.