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Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization

机译:在SiC基板上的AlGaN / GaN Hemt中的产生 - 重组缺陷,通过低频噪声测量和SIMS表征证明了

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Wide bandgap devices such as AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on silicon carbide (SiC) substrate are investigated. Low frequency noise (LFN) measurements have been carried out to evaluate the structural perfection of dual gated HEMT devices featuring 0.25X2X75(mu)m~(2) gate area: generation-recombination (GR) processes are evidenced. Two sets of GR-bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR-bulge is composed of two GR centers. The devices are then characterized in a temperature controlled oven, and these GR centers are extracted from LFN spectra versus temperature. Activation energies of the defects located at the AlGaN/GaN interface are measured at 0.38+-0.05eV and 0.21+-0.05eV using Arrhenius plots under saturated biasing conditions. Equivalent activation energies are extracted under ohmic biasing conditions. These results are compared with SIMS measurements, using the deuterium in diffusion condition as a probe to integrally explore the presence of defects throughout the AlGaN-GaN HEMT structure. Large concentrations of deuterium (more than 10~(20) D concentration per cm~(3)) are measured at the AlGaN/GaN interface and in the 2DEG layer, thus proving the presence of numerous vacations at the AlGaN/GaN interface as well as in the 2DEG. From the confrontation with previously published results, the defects might be assigned to the nitrogen vacancy and to Mg_(Ga)-V_(N) complexes.
机译:宽带隙器件诸如AlGaN / GaN高电子迁移率生长在碳化硅(SiC)基板晶体管(HEMT)进行了研究。低频噪声(LFN)测量已进行了评价的双门控HEMT器件设有0.25X2X75(MU)的结构完美米〜(2)栅极区:产生 - 复合(GR)过程证明。两组分别有关的AlGaN / GaN界面和量子GR-凸出部的孔被识别。每个GR-隆起由两个GR中心。然后将装置的特征在于,恒温槽的温度,并且这些GR中心从LFN光谱随温度变化萃取。位于的AlGaN / GaN界面处的缺陷的活化能是在0.38 + -0.05eV测量和0.21 + -0.05eV使用饱和偏置的条件下Arrhenius图。等效活化能欧姆偏置条件下萃取。这些结果与SIMS测量相比较,在使用漫射条件氘作为探针一体探索的整个AlGaN基的GaN HEMT结构中的缺陷的存在。在的AlGaN / GaN界面和2DEG层测定,由此证明许多休假在的AlGaN / GaN界面处的存在以及氘的浓度大(每厘米〜(3)超过10〜(20)d浓度)在二维电子气。从与先前公布的结果的对抗中,缺陷可能被分配给氮空位并Mg_(Ga)的-V_(N)复合物。

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