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Study on High Thermal Conductivity and Thick-Thin Film Hybrid Technology of AlN Substrate

机译:ALN衬底高导热率和厚薄膜混合技术研究

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With the trend of miniaturization high power and frequency of electronic devices, the higher performances of cooling, wiring density and lower loss for substrate have been required. Thick Film Circuits and Thin Film Circuits have their limitations on fine wiring and multilayer wiring respectively, which are difficult to simultaneously meet these requirements. In this study, thick-thin film hybrid AIN substrate with properties of high thermal conductivity, multilayer wiring and fine wiring has been researched. The thermal conductivity of AIN substrate has been improved to 190 W/mK by optimizing the preparation and it can content with the cooling requirements effectively. Thick-thin film hybrid technology is induced to meet high density wiring and lower loss. This kind of substrate can be used to High- Power T/R Module, High Speed Optical Transceiver Module and other fields.
机译:随着微型化的高功率和电子设备频率的趋势,已经需要更高的冷却性能,布线密度和较低的衬底损耗。厚膜电路和薄膜电路分别对细线和多层布线的限制分别难以同时满足这些要求。在该研究中,已经研究了具有高导热率,多层布线和细布线性能的厚薄膜杂交AIN基板。通过优化制剂,AIN基板的导热率已经改善为190W / mk,并且可以有效地含有冷却要求。诱导厚薄膜混合技术,以满足高密度布线和较低损耗。这种基板可用于高功率T / R模块,高速光收发器模块和其他领域。

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