Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

机译：Si，SOI和Poly-Aln基板上GaN功率HEMTS的热阻表征

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In this work the thermal behavior of GaN HEMTs is studied with a three-fold contribution: (i) test structures are introduced and manufactured; (ii) subsequently, those are used to perform the thermal characterization of small and power HEMTs on Si, SOI, a

机译：在这项工作中，通过三倍的贡献研究了GaN Hemts的热行为：（i）介绍和制造测试结构; （ii）随后，用于在Si，SOI，a上执行小型和功率HEMT的热表征

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《International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems》|2020年|395p|共6页
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Alessandro Magnani; Thibault Cosnier; Nooshin Amirifar; Ming Zhao; Xiangdong Li; Karen Geens; Stefaan Decoutere;
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中图分类自动模拟理论（自动仿真理论）;
关键词
Temperature measurement; Substrates; Thermal resistance; Electrical resistance measurement; Silicon; Fingers;

机译：温度测量;基板;热阻;电阻测量;硅;手指;

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专利

1. Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates [J] . Magnani Alessandro, Cosnier Thibault, Amirifar Nooshin, Microelectronics reliability . 2021,第Mara期

机译：Si，SOI和Poly-Aln基板上GaN横向动力垫的热表征
2. Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation [J] . Chvala Ales, Szobolovszky Robert, Kovac Jaroslav Jr., Journal of Electronic Packaging . 2019,第3期

机译：三维模拟支持的SiC衬底上AlGaN / GaN多指功率HEMT的先进表征技术和热性能分析
3. Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations [J] . Garcia S., Iniguez-de-la-Torre I., Mateos J., Semiconductor science and technology . 2016,第6期

机译：衬底和热边界电阻对通过电热蒙特卡洛模拟分析的AlGaN / GaN HEMT性能的影响
4. Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates [C] . Alessandro Magnani, Thibault Cosnier, Nooshin Amirifar, International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems . 2020

机译：Si，SOI和聚AlN衬底上的GaN功率HEMT的热阻特性
5. Modeling and Characterization of High-power Electronic Devices: System Analysis of Laser Diodes with Flash Boiling and GaN HEMT Reliability Modeling [D] . Schlenker, Evan L. 2018

机译：高功率电子设备的建模与鉴定：闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
6. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
7. Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation [O] . Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, 2019

机译：三维仿真支撑的SiC基板上AlGaN / GaN Multifiger功率HEMTS热性能的高级表征技术及分析
8. Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. [R] . Nochetto, H. C., Jankowski, N. R., Morgan, B., 2012

机译：结合GaN衬底热边界电阻的氮化镓（GaN）高电子迁移率晶体管（HEmT）器件的混合多栅模型。

Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

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