...
机译:衬底和热边界电阻对通过电热蒙特卡洛模拟分析的AlGaN / GaN HEMT性能的影响
Univ Salamanca, Dept Fis Aplicada, Plaza Merced S-N, E-37008 Salamanca, Spain;
Univ Salamanca, Dept Fis Aplicada, Plaza Merced S-N, E-37008 Salamanca, Spain;
Univ Salamanca, Dept Fis Aplicada, Plaza Merced S-N, E-37008 Salamanca, Spain;
Univ Salamanca, Dept Fis Aplicada, Plaza Merced S-N, E-37008 Salamanca, Spain;
Univ Salamanca, Dept Fis Aplicada, Plaza Merced S-N, E-37008 Salamanca, Spain;
AlGaN/GaN HEMT; Monte Carlo; electro-thermal simulations; GaN; self-heating;
机译:蒙特卡罗方法对AlGaN / GaN二极管进行自洽电热模拟
机译:亚微米纤锌矿GaN / AlGaN HEMT的电热蒙特卡罗模拟
机译:SiC衬底上的AlGaN / GaN HEMT中的热边界电阻基准测试:成核层微结构的含义
机译:通过电热蒙特卡洛模拟评估GaN二极管中的热阻
机译:机械应力对AlGaN / GaN HEMT性能的影响:沟道电阻和栅极电流。
机译:在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
机译:通过电热蒙特卡罗模拟评估GaN-二极管的热阻
机译:GaN /衬底热边界电阻对HEmT器件的影响