Analysis of SiC Schottky diodes after thermal vacuum test by means of lock-in infrared thermography

机译：通过锁定红外热成像通过锁定热真空测试后SiC肖特基二极管分析

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In this work, SiC Schottky diodes specifically developed for the BepiColombo space mission are studied by Lock-in Infrared Thermography (LIT) to analyse local defects observed in their top metallization and passivation layers appeared after thermal vacuum

机译：在这项工作中，通过锁定红外热成像（LIT）研究了专门为Bepicolombo空间任务开发的SIC肖特基二极管，以分析热真空后出现在其顶部金属化和钝化层中观察到的局部缺陷

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《International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems》|2020年|395p|共6页
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M. Vellvehi; X. Perpi?à; O. Avi?ó; C. Ferrer; N. Fusté; D. Sánchez; X. Jordà; P. Godignon; S. Massetti;
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中图分类自动模拟理论（自动仿真理论）;
关键词
Silicon carbide; Schottky diodes; Semiconductor device measurement; Space vehicles; Mercury (planets); Modulation; Thermal analysis;

机译：碳化硅;肖特基二极管;半导体器件测量;太空车辆;汞（行星）;调制;热分析;

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专利

1. Analysis on partial thermal resistances of packaged SiC schottky barrier diodes at elevated temperatures [J] . Kim Taehwa, Funaki Tsuyoshi Japanese journal of applied physics . 2016,第4s期

机译：高温下封装的SiC肖特基势垒二极管的部分热阻分析
2. Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes [J] . Abbate C., Busatto G., Cova P., Nuclear Science, IEEE Transactions on . 2015,第1期

机译：SiC肖特基二极管中重离子辐照引起的热损伤分析
3. Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes [J] . J León, X Perpi?à, M Vellvehi, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第38期

机译：SiC肖特基二极管中局部多势垒行为的小信号热分析
4. Analysis of SiC Schottky diodes after thermal vacuum test by means of lock-in infrared thermography [C] . M. Vellvehi, X. Perpiñà, O. Aviñó, International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems . 2020

机译：锁定红外热成像法分析热真空试验后的SiC肖特基二极管
5. Infrared thermography as applied to thermal testing of power systems circuit boards. [D] . Miles, Jonathan James. 1994

机译：红外热成像技术，用于电力系统电路板的热测试。
6. 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes [O] . Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, 2021

机译：具有4H-SIC肖特基二极管的60-700 k CTAT和PTAT温度传感器
7. Temperature measurements in thermal-vacuum tests for spacecraft qualification – possibilities for infrared thermography [O] . Daniel Döring, Peter Jens Hein, Christian Spiessberger 2016

机译：用于航天器鉴定的热真空测试中的温度测量 - 红外热成像的可能性
8. Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor [R] . Griffin, T. E. 2006

机译：碳化硅（siC）肖特基二极管和siC金属氧化物半导体的脉冲电容测量

Analysis of SiC Schottky diodes after thermal vacuum test by means of lock-in infrared thermography

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