Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor

摘要

The incremental capacitance C was measured for a silicon carbide (SiC) Schottky diode during a reverse-biasing pulse and for two SiC n-MOS transistors during a negative pulse to their source with the drain grounded. C was measured as a function of pulsed voltage to 600 V, and on a gain-phase analyzer as a function of frequency and bias voltage to 40 V.