Tomographic study of silicon nanoparticles in nanocrystalline non-volatile flash memory devices by EFTEM

摘要

The distribution of Si nanoparticles, both dimensional and spatial, is a key factor affecting the performance of nonvolatile flash memory devices. A new FIB method has been developed to prepare ultra-thin plan view specimens, containing only the Si nanoparticle matrix thin film layer, from fully processed nanocrystalline flash memory devices. The morphology and distribution of Si nanoparticles were then studied by EFTEM 3D tomographic reconstruction.