plasma deposition technique using nano- crystalline silicon membrane structure , forming his way , having a nanocrystalline silicon film structure non-volatile memory device and its forming method

摘要

The invention nanocrystalline silicon film structure using a plasma deposition technique, and his method of forming a nanocrystalline silicon film relates to non-volatile memory element and its forming method includes a structure, according to the method of forming the nano-crystal silicon film structure, comprising: forming a buffer on the substrate and a gas containing silicon and each hydrogen on the buffer layer a step of forming a nano-crystal silicon by plasma deposition technique using a. ; The nano-crystal silicon film by using a plasma deposition technique, such as the structure, its forming method, comprising the nano-crystal silicon film structure non-volatile memory device and by its forming method, the prior art process and nano-crystal silicon on a glass substrate by a plasma vapor deposition method without performing the film deposition by directly reducing the manufacturing process of the non-volatile memory device, such as in the production costs can be reduced.