Novel ESD Protection Scheme for Testing High Voltage LDMOS

摘要

This paper presents a novel protection circuit forElectrostatic Discharge (ESD) for testing high-voltage devicesusing Silicon Controlled Rectifiers (SCRs). ESD relatedissues lead to test equipment damage, hence efficientprotection techniques play a very critical role in testing highvoltage devices. High-Voltage Laterally-Diffused MOSs (HVLDMOSs)is extensively used for high voltage applicationsdue to its advantages over other metal oxide semiconductorstructures. In high voltage devices ESD protection is generallyprovided between the drain and source terminals. We haveimplemented SCRs as the ESD protection circuit for the drainconnection in HV-LDMOSs. We have developed ESD stressmodels using conventional techniques such as human body,machine and charged device models for the high-voltagedevices and implement SCRs as protection circuit in the highvoltageDIBs. Simulation has been completed to obtain theESD stress data of the device. This ESD stress model datacan be used to automate our testing process by incorporatingthe novel ESD protection scheme on a newly developed testsoftware tool.