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Circuits providing ESD protection to high voltage laterally diffused metal oxide semiconductor (LDMOS) transistors
Circuits providing ESD protection to high voltage laterally diffused metal oxide semiconductor (LDMOS) transistors
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机译:为高压横向扩散金属氧化物半导体(LDMOS)晶体管提供ESD保护的电路
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摘要
Circuits including a laterally diffused output driver transistor and a distinct device configured to provide electrostatic discharge (ESD) protection for the laterally diffused output driver transistor are presented. In general, the device configured to provide ESD protection includes a drain extended metal oxide semiconductor transistor (DEMOS) transistor configured to breakdown at a lower voltage than a breakdown voltage of the laterally diffused output driver transistor. The laterally diffused output driver transistor may be a pull-down or a pull-up output driver transistor. The device also includes a silicon controlled rectifier (SCR) configured to inject charge within a semiconductor layer of the circuit upon breakdown of the DEMOS transistor. Moreover, the device includes a region configured to collect the charge injected from the SCR and further includes an ohmic contact region configured to at least partially affect the holding voltage of the SCR.
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