POTENTIAL INDUCED DEGRADATION IN MONO-CRYSTALLINE SILICON BASED MODULES: AN ACCELERATION MODEL

摘要

As a possible root cause of significant power loss in large-scale photovoltaic systems, the potentialinduced degradation (PID) is subjected to intense investigations among the photovoltaic community. In order toobtain an acceleration model of the PID effect, we have undertaken a set of PID experiments with variations of allrelevant environmental parameters (external voltage, temperature, humidity). Our experimental results enable us todevelop a consistent mathematical model of the PID effect in standard PV modules. Based on that, we suggest astandard PID testing method and an acceptance criterion that should secure a stable power yield of PV systems underfield conditions.