POTENTIAL INDUCED DEGRADATION IN MONO-CRYSTALLINE SILICON BASED MODULES: AN ACCELERATION MODEL

摘要

As a possible root cause of significant power loss in large-scale photovoltaic systems, the potential induced degradation (PID) is subjected to intense investigations among the photovoltaic community. In order to obtain an acceleration model of the PID effect, we have undertaken a set of PID experiments with variations of all relevant environmental parameters (external voltage, temperature, humidity). Our experimental results enable us to develop a consistent mathematical model of the PID effect in standard PV modules. Based on that, we suggest a standard PID testing method and an acceptance criterion that should secure a stable power yield of PV systems under field conditions.