In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance.

摘要

We seek to forecast the lifetime of modules in the field using accelerated testing. Collection of sufficient data from modules undergoing indoor accelerated lifetime testing to enable statistical analyses and lifetime predictions has been difficult, and data are lacking. Measurement of power degradation generally involves intermittently removing the module from the environmental chamber and measuring power on a solar simulator, which is a time-consuming process when numerous samples are involved. Methods are therefore sought to characterize the state of degradation of the module in-situ during stress testing.