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Quality and Reliability of 3D TSV Interposer and Fine Pitch Solder Micro-bumps for 28nm Technology

机译:适用于28nm技术的3D TSV中介层和细间距焊锡微凸块的质量和可靠性

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Silicon interposer minimizes CTE mismatch between thechip and copper filled TSV interposer resulting in highreliability micro bumps. Furthermore, providing high wiringdensity interconnections and improved electrical performanceare the reasons TSV interposer has emerged as a goodsolution and getting significant industry attention.High density three dimensional (3D) interconnects formedby high aspect ratio through silicon via (TSV) and fine pitchsolder micro bumps are presented in this paper. Differentdesign/material related factors are evaluated during this studyin order to yield high aspect ratio void-free TSV copper viaand reliable micro-bumps. Quality and reliability of copperTSV and micro-bumps are monitored in-situ during theprocess. This paper presents some of the quality and reliabilityresults as well as micro-bump and TSV resistance data.Furthermore, bake and thermal-cycling measurements arepresented to insure reliability of the design and the materialselected for the 28nm technology TSV interposer FPGA.
机译:硅中介层可最大程度地减少芯片之间的CTE不匹配 芯片和铜填充的TSV中介层导致高 可靠性微凸点。此外,提供高接线 密度互连和改善的电气性能 是TSV中介层之所以成为很好的原因 解决方案并获得业界的广泛关注。 形成高密度三维(3D)互连 通过硅通孔(TSV)和小间距实现高长宽比 本文介绍了焊料微凸点。不同的 在这项研究中评估与设计/材料相关的因素 为了产生高纵横比的无孔TSV铜通孔 和可靠的微型凸点。铜的质量和可靠性 在整个生产过程中,对原位通孔和微凸点进行现场监测。 过程。本文介绍了一些质量和可靠性 结果以及微凸点和TSV电阻数据。 此外,烘烤和热循环测量是 提出以确保设计和材料的可靠性 选择用于28nm技术的TSV插入器FPGA。

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