Fabrication of High Aspect Ratio TSV and Assembly With Fine-Pitch Low-Cost Solder Microbump for Si Interposer Technology With High-Density Interconnects

摘要

Fabrication of high aspect ratio through silicon vias (TSVs) in a Si interposer and fine pitch solder microbumps on a top Si die is discussed in this paper. Chip stacking result of the Si interposer and the top Si die is also presented. TSVs with 25 $mu{rm m}$ in pitch and aspect ratio higher than 10 are etched with BOSCH process. To avoid difficulties in wetting the sidewall of the TSVs, bottom-up plating method is used to fill the TSVs with Cu. In order to fill the TSVs from bottom, the TSVs are first sealed from the bottom by plated Cu with plating current of 1 A. The plated Cu is used as a seed layer and bottom-up plating is then conducted with plating current of 0.1 A. Good filling without voids or with only tiny voids has been achieved. Electroless nickel/immersion gold is plated on top of the TSVs as under bump metallurgy pads. On the top Si die, Cu pillars/Sn caps with 16 $mu{rm m}$ in diameter and 25 $mu{rm m}$ in pitch are fabricated with electroplating method. After chip stacking, interconnections are formed between them through the solder microbumps and the TSVs.