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首页> 外文期刊>Microelectronics journal >An optimized through-via bottom-up method for simultaneous-filling TSVS of different aspect-ratios and its potential application on high-frequency passive interposer
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An optimized through-via bottom-up method for simultaneous-filling TSVS of different aspect-ratios and its potential application on high-frequency passive interposer

机译:用于同时填充不同纵横比的TSV的优化贯通方法及其对高频无源插入器的潜在应用

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摘要

Passive interposer has become an attractive integrator for 2.5D/3D integration. TSV is the key technology for passive interposer. Coaxial-like transmission structure provides a low-cost solution of shielding TSV for high frequency application. Impedance matching needs coaxial-like TSVs to usually have different diameters. This paper presents an optimized through-via bottom-up filling method, which enables simultaneously copper filling TSVs with different aspect ratios. The demonstrated coaxial-like TSV structure have one signal-TSV and six grounded-TSVs. A potential voids problem of the filling method is identified and solved by adding suppressor. Simultaneously filling of signal-TSV and grounded-TSVs was realized by adjusting electroplating parameters, e.g. current density and stirring rate. The measured result of fabricated coaxial-like TSVs is comparable to the simulation. The result verifies that with this optimized filling method, the design of passive interposer equipped with coaxial-like vias can be more flexible and the impedance matching between TSVs and other components can be easily realized for high frequency applications.
机译:被动插入器已成为2.5D / 3D集成的有吸引力的集成商。 TSV是被动插入器的关键技术。同轴的变速器结构为高频应用提供了屏蔽TSV的低成本解决方案。阻抗匹配需要同轴的TSV通常具有不同的直径。本文介绍了一种优化的通孔自下而上的填充方法,其使具有不同纵横比的同时铜填充TSV。所示的同轴样TSV结构具有一个信号-TSV和六个接地TSV。通过添加抑制剂来鉴定和解填充方法的潜在空隙问题。通过调节电镀参数,例如通过调节电镀参数来实现信号TSV和接地TSV的同时填充。电流密度和搅拌速率。制造的同轴样TSV的测量结果与模拟相当。结果验证了利用这种优化的填充方法,配备有同轴孔的无源插入器的设计可以更加柔韧,并且可以容易地实现TSV和其他组件之间的阻抗匹配,用于高频应用。

著录项

  • 来源
    《Microelectronics journal》 |2020年第7期|104798.1-104798.6|共6页
  • 作者单位

    Chinese Acad Sci State Key Lab Transducer Technol Shanghai Inst Microsyst & Informat Technol Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Chinese Acad Sci State Key Lab Transducer Technol Shanghai Inst Microsyst & Informat Technol Shanghai 200050 Peoples R China;

    Chinese Acad Sci State Key Lab Transducer Technol Shanghai Inst Microsyst & Informat Technol Shanghai 200050 Peoples R China;

    Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Chinese Acad Sci State Key Lab Transducer Technol Shanghai Inst Microsyst & Informat Technol Shanghai 200050 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Interposer; Coaxial TSV; Radio-frequency system-in-package; Through-via electroplating; 2.5D/3D integration; Simultaneously filling;

    机译:插入器;同轴TSV;射频系统 - 包装;通过电镀;通过电镀;2.5D / 3D集成;同时填充;

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