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ANNEALING OF ITO FILMS SPUTTERED WITH ARGON AND OXYGEN

机译:氩和氧溅射的ITO薄膜的退火

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Dc magnetron sputter deposited indium tin oxide (ITO) films for silicon based hetero-junction solarcell application are studied. The films show suitable properties with transmittance as high as ~94% and resistivity aslow as 2.2 × 10-4 Ω cm. Oxygen is used as reactive gas and the sputtering gas is argon. The depositions are done atroom temperature, and subsequent annealing is carried out on a hot-plate at different temperatures (250 °C, 300°Cand 350°C) in air atmosphere. The O_2/(Ar+O_2) flow vol% into the sputtering chamber is varied from 0 to 25. Animprovement in optical and electrical properties is demonstrated when the films are annealed. The structure of the asdepositedfilms is shown to be dependent on the oxygen present during sputtering. When no oxygen is added, thefilms exhibit an amorphous structure. When oxygen flow is introduced, the XRD patterns indicate crystalline films.Besides, high flows of oxygen results in higher resistivity of the films. The resistivity can be considerably reduced bya post-deposition heat treatment.
机译:用于硅基异质结太阳能电池的直流磁控溅射沉积铟锡氧化物(ITO)膜 研究细胞应用。薄膜显示出合适的性能,透光率高达〜94%,电阻率达 低至2.2×10-4Ωcm。氧气用作反应气体,溅射气体为氩气。沉积在 室温,然后在不同温度(250°C,300°C 和350°C)。进入溅射室的O_2 /(Ar + O_2)流量百分比在0到25之间变化。 当薄膜退火时,证明了光学和电学性质的改善。沉积物的结构 薄膜被证明是依赖于溅射过程中存在的氧气。当不添加氧气时, 膜表现出无定形结构。当引入氧气流时,XRD图谱指示结晶膜。 此外,氧气的大量流动导致膜的更高的电阻率。电阻率可以通过以下方式大大降低 沉积后热处理。

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