Dc magnetron sputter deposited indium tin oxide (ITO) films for silicon based hetero-junction solarcell application are studied. The films show suitable properties with transmittance as high as ～94% and resistivity aslow as 2.2 × 10-4 Ω cm. Oxygen is used as reactive gas and the sputtering gas is argon. The depositions are done atroom temperature, and subsequent annealing is carried out on a hot-plate at different temperatures (250 °C, 300°Cand 350°C) in air atmosphere. The O_2/(Ar+O_2) flow vol% into the sputtering chamber is varied from 0 to 25. Animprovement in optical and electrical properties is demonstrated when the films are annealed. The structure of the asdepositedfilms is shown to be dependent on the oxygen present during sputtering. When no oxygen is added, thefilms exhibit an amorphous structure. When oxygen flow is introduced, the XRD patterns indicate crystalline films.Besides, high flows of oxygen results in higher resistivity of the films. The resistivity can be considerably reduced bya post-deposition heat treatment.
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