Producing a surface layer of a substrate e.g. ceramic electrode, comprises applying the surface layer on the substrate in an atmosphere of argon and oxygen by a sputter deposition, and setting the oxygen with oxygen partial pressure

摘要

The method for producing a surface layer of a substrate e.g. ceramic electrode, comprises applying the surface layer on the substrate in an atmosphere of argon and oxygen by a sputter deposition, setting the oxygen with a regulatable oxygen partial pressure for regulation, and adjusting a specific surface resistance of the surface layer by regulating the oxygen partial pressure. The oxygen is continuously supplied. The oxygen supply enables the regulation of the oxygen partial pressure of 0.5x 10 - 4torr to 1.5x 10 - 3torr. The sputter deposition on the substrate is carried out by a target. The method for producing a surface layer of a substrate e.g. ceramic electrode, comprises applying the surface layer on the substrate in an atmosphere of argon and oxygen by a sputter deposition, setting the oxygen with a regulatable oxygen partial pressure for regulation, and adjusting a specific surface resistance of the surface layer by regulating the oxygen partial pressure. The oxygen is continuously supplied. The oxygen supply enables the regulation of the oxygen partial pressure of 0.5x 10 - 4torr to 1.5x 10 - 3torr. The sputter deposition on the substrate is carried out by a target from tungsten (90%) and titanium (10%) for a time period of 2 seconds. The total pressure consists of the oxygen partial pressure and an argon partial pressure, and has a given first value of 5x 10 - 3mbar. The oxygen partial pressure is regulated to a second value and subsequently the argon partial pressure to a third value, up to which the first value of the total pressure is obtained. The distance of the target from the substrate is adjusted to 6 cm during the sputter deposition. The diameter of the target is 15-16 cm. A thickness of the surface layer is 1 mu m. The sputter deposition is carried out by a high frequency source with an operating voltage of 2kV. An independent claim is included for a surface layer of a substrate such as ceramic electrode.