3D modeling and electrical characteristics of through-silicon-via (TSV) in 3D integrated circuits

摘要

Probably the most widely known more-than-Moore solutions is 3D chip stacking using TSV. The authors of this paper propose an equivalent circuit model of TSV and extract the values of passive elements within the model from full-wave scattering parameters simulation. Then, in order to estimate the signal distortion, the eye-diagram and TDR simulation are made and demonstrated. Additionally, transmission performance and the crosstalk of differential TSV with redistribution layer (RDL) are explored. The design rules for optimized crosstalk performance for TSVs with RDL are put forward.