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Memory controller placement in a three-dimensional (3D) integrated circuit (IC) (3DIC) employing distributed through-silicon-via (TSV) farms
Memory controller placement in a three-dimensional (3D) integrated circuit (IC) (3DIC) employing distributed through-silicon-via (TSV) farms
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机译:在采用分布式硅通孔(TSV)场的三维(3D)集成电路(IC)(3DIC)中放置内存控制器
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摘要
Aspects disclosed in the detailed description include memory controller placement in a three-dimensional (3D) integrated circuit (IC) (3DIC) employing distributed through-silicon-via (TSV) farms. In this regard, in one aspect, a memory controller is disposed in a 3DIC based on a centralized memory controller placement scheme within the distributed TSV farm. The memory controller can be placed at a geometric center within multiple TSV farms to provide an approximately equal wire-length between the memory controller and each of the multiple TSV farms. In another aspect, multiple memory controllers are provided in a 3DIC based on a distributed memory controller placement scheme, in which each of the multiple memory controllers is placed adjacent to a respective TSV farm among the multiple TSV farms. By disposing the memory controller(s) based on the centralized memory controller placement scheme and/or the distributed memory controller placement scheme in the 3DIC, latency of memory access requests is minimized.
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