首页> 外文会议>2011 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems >Electromigration, fuse and thermo-mechanical performance of solder bump versus Cu pillar flip chip assemblies
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Electromigration, fuse and thermo-mechanical performance of solder bump versus Cu pillar flip chip assemblies

机译:焊料凸点与Cu柱倒装芯片组件的电迁移,保险丝和热机械性能

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摘要

Two different flip chip bump configurations have been investigated in terms of their thermo-mechanical, electromigration and fusing behaviour. Standard SAC (SnAgCu) solder bumps with a Ni/Au finish on the chip side are compared with Cu pillar bumps soldered with a thin layer of SnAg alloy. For the test structure, the flip chip assembly is integrated in a BGA package. Finite Element Modelling is used to support the experimental work and explain some of the conclusions.
机译:已经研究了两种不同的倒装芯片凸点配置,包括其热机械性能,电迁移性能和熔合性能。比较了在芯片侧具有镍/金光洁度的标准SAC(SnAgCu)焊料凸点与焊接有SnAg合金薄层的Cu柱凸点。对于测试结构,倒装芯片组件集成在BGA封装中。有限元建模用于支持实验工作并解释一些结论。

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