Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P films using Multiple Characterization Techniques

摘要

In addition to device scaling, strain engineering using SiC stressorsin the S/D regions is important for nFET performanceenhancement. In this paper, we review the characterization offully-strained epitaxial SiC and in-situ doped SiC:P films forvarious ion implant conditions and anneals that are typically usedin traditional CMOS flows. Full characterization has helpedidentify process integration schemes which give significant drivecurrent enhancements.