Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals

摘要

The invention relates to the use of a combination of ionic implantations of C+ and conventional anneals to produce complex SiC-based multilayer structures. This combination of techniques, which is well known in Si technology, provides great versatility in the structure of the synthesized layers (amorphous, polycrystalline or crystalline structure with crystalline orientation control; multilayers, buried layers or layers on insulating material) and makes it possible to obtain layers with very low levels of residual stress and with surfaces and interfaces having very low roughness, which characterized by the absence of cavities (unlike other techniques such as CVD or MBE), the latter features being extremely important for viability and reliability of synthesized multilayer structures in various applications, for instance, in MicroElectroMechanical (MEMS) devices.