首页> 外国专利> METHOD FOR PRODUCING CARBON MATERIAL WITH SiC COATED CARBON MATERIAL COATED WITH silicon carbide, sintered silicon carbide COMPLEX / carbon SINTERED COMPLEX SILICON CARBIDE / CARBON COATED WITH CERAMIC AND METHOD FOR COMPLEX sintered silicon carbide / carbon

METHOD FOR PRODUCING CARBON MATERIAL WITH SiC COATED CARBON MATERIAL COATED WITH silicon carbide, sintered silicon carbide COMPLEX / carbon SINTERED COMPLEX SILICON CARBIDE / CARBON COATED WITH CERAMIC AND METHOD FOR COMPLEX sintered silicon carbide / carbon

机译:用碳化硅,碳化硅烧结的复合物/碳烧结复合碳化硅/涂有陶瓷的碳/碳化硅涂覆的碳材料生产碳材料的方法以及复合烧结碳化硅/碳的方法

摘要

1. A method of producing a carbon material with a silicon carbide coating, comprising the following steps: producing a carbon material on the surface of which there are centers of the basal plane of the SP carbon structure without free valencies and centers of the lateral plane of the SP carbon structure with free valencies; and the interaction between the surface of the carbon material and gaseous SiO in an ambient atmosphere at a temperature of from 1400 ° C to 1600 ° C and a pressure of from 1 to 150 Pa to produce silicon carbide and thereby a carbon material with silicon carbide coating. 2. A method for producing a carbon material with a silicon carbide coating according to claim 1, wherein the carbon material is a graphite material. A method for producing a carbon material with a silicon carbide coating according to claim 1, wherein the carbon material is carbon particles. A method for producing a carbon material with a silicon carbide coating according to claim 3, wherein the average carbon particle size corresponds to a range from 50 nm to 500 μm. A method for producing a carbon material with a silicon carbide coating according to claim 1, wherein gaseous SiO is obtained from a source of SiO placed together with the carbon material. A method for producing a carbon material with a silicon carbide coating according to claim 5, wherein the carbon material and the SiO source are placed in a reaction tank, this reaction tank is placed in a heating furnace to create an elevated temperature and a reduced pressure inside the reaction vessel. Silicon carbide coated carbon material
机译:1.一种生产具有碳化硅涂层的碳材料的方法,包括以下步骤:制备在其表面上具有SP碳结构的基面中心没有自由价和侧向中心的碳材料。 SP碳结构具有自由价;以及在环境气氛中,温度为1400°C至1600°C,压力为1至150 Pa的情况下,碳材料的表面与气态SiO之间的相互作用,从而生成碳化硅,从而生成具有碳化硅的碳材料涂层。 2.根据权利要求1所述的用于制造具有碳化硅涂层的碳材料的方法,其中,所述碳材料是石墨材料。 2.根据权利要求1所述的具有碳化硅涂层的碳材料的制造方法,其中,所述碳材料为碳颗粒。 4.根据权利要求3所述的具有碳化硅涂层的碳材料的制造方法,其中,平均碳粒径为50nm〜500μm的范围。 2.根据权利要求1所述的具有碳化硅涂层的碳材料的制造方法,其中,从与所述碳材料一起放置的SiO源获得气态SiO。 6.根据权利要求5所述的具有碳化硅涂层的碳材料的制造方法,其中,将所述碳材料和所述SiO源放置在反应槽中,将该反应槽放置在加热炉中以产生高温和低压。在反应容器内。碳化硅涂层碳材料

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