Threshold Current Density Reduction by Annealing in 630-650nm GaInP Strained Single Quantum Well Lasers

摘要

Annealing effects on hreshold current density (J_(th)) of GalnP strained single quantum well (SSQW) lasers were systematically investigated. After the annealing, remarkable reduction of the J_(th) of 630-650nm lasers was observed, accompanied by increase of p carrier density of the p-cladding layers. Especially, the J_(th) of 633-nm lasers was reduced from 850 A/cm~2 to 555 A/cm~2. The annealing effect on the J_(th) reduction can be theoretically explained by suppressing electron leakage currents, especially drift leakage current over p-side heterobarriers.