首页> 外文学位 >A unified picture of threshold behaviour in strained quantum well lasers.
【24h】

A unified picture of threshold behaviour in strained quantum well lasers.

机译:应变量子阱激光器中阈值行为的统一图片。

获取原文
获取原文并翻译 | 示例

摘要

The focus of this investigation is to provide a unified understanding of the relative impact of compressive and tensile strain on thresholds in III-V separate-confinement-heterostructure single-quantum-well (SCH SQW) lasers. First, a strained-layer laser model for SCH SQW lasers that calculates gain spectra, differential gain, light-current characteristics, and threshold current densities is developed. This model is based on a six valence-band Luttinger-Kohn finite-element dispersion calculation.; Second, an extensive theoretical and experimental study on tensile-strained GaAsP-AlGaAs SCH SQW broad-area stripe lasers is performed to understand a complex interplay of TE and TM gains and modal losses unique to tensile-strained lasers. Threshold current density measurements for sample sets encompassing 10 phosphorus compositions ranging from 0 to 30% and 5 cavity lengths ranging from 300 to 1500 {dollar}mu{dollar}m are reported. The theoretical model is used to replicate detailed features of the experimental data including absolute magnitudes and polarization-switching behaviour. A constant gain contour approach is introduced to explain the dependence of the measured thresholds on strain and cavity length as a result of competition between a TM gain advantage and a TM electromagnetic disadvantage. Tensile strain is shown to have a minimal impact on threshold current densities for GaAsP-AlGaAs lasers.; Third, a comparative analysis of strain effects on laser performance in the InGaAs-GaAs-AlGaAs, GaInAs-GaInAsP and GaInAsP-GaInAsP material systems is presented. Different approaches to analyzing strained-laser performance such as constant-well-width, constant-wavelength and Seki pure strain studies are employed. The constant gain contour approach combined with the pure strain strategy is shown to provide a powerful tool for the understanding of strain effects in 1.3 {dollar}mu{dollar}m GaInAsP-GaInAsP lasers. It is explained that tensile-strain lowers thresholds relative to unstrained and compressively strained lasers only in certain high optical gain regimes and that tensile-strain is expected to provide high differential gain in all regimes of operation for the material systems investigated in this study.
机译:这项研究的重点是提供对压缩和拉伸应变对III-V分离约束异质结构单量子阱(SCH SQW)激光器阈值的相对影响的统一理解。首先,建立了用于SCH SQW激光器的应变层激光器模型,该模型计算增益谱,差分增益,光电流特性和阈值电流密度。该模型基于六价带Luttinger-Kohn有限元色散计算。其次,对拉伸应变的GaAsP-AlGaAs SCH SQW广域条纹激光器进行了广泛的理论和实验研究,以了解TE和TM增益与拉伸应变激光器特有的模态损耗之间的复杂相互作用。据报道,样品组的阈值电流密度测量值涵盖了范围从0%到30%的10种磷组成和范围从300到1500μm的5种腔长。该理论模型用于复制实验数据的详细特征,包括绝对幅度和偏振转换行为。引入恒定增益轮廓方法来解释由于TM增益优势和TM电磁劣势之间的竞争而导致的测量阈值对应变和腔体长度的依赖性。拉伸应变对GaAsP-AlGaAs激光器的阈值电流密度影响最小。第三,比较分析了应变对InGaAs-GaAs-AlGaAs,GaInAs-GaInAsP和GaInAsP-GaInAsP材料系统中激光性能的影响。采用了不同的方法来分析应变激光器的性能,例如恒定孔宽度,恒定波长和Seki纯应变研究。恒定增益轮廓方法与纯应变策略相结合,为理解1.3μmGaInAsP-GaInAsP激光器中的应变效应提供了强大的工具。可以解释的是,仅在某些高光学增益范围内,拉伸应变相对于未应变和压缩应变的激光才降低了阈值,并且在本研究中研究的材料系统的所有工作模式下,拉伸应变均有望提供较高的差分增益。

著录项

  • 作者单位

    University of Massachusetts Amherst.;

  • 授予单位 University of Massachusetts Amherst.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1995
  • 页码 154 p.
  • 总页数 154
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号