Enhanced Process Window for BPSG Flow in a Salicide Process Using a LPCVD Nitride Cap Layer

摘要

Optimisation of BPSG flow and TiSi2 degradation in a 1.0 ¿m CMOS process is studied. It is shown that a nitride cap layer allows to flow the BPSG in a steam ambient without excessive degradation of the silicide. A simple model for the degradation of the TiSi2 sheet resistance is derived. The observed degradation of the TiSi2 film is independent of the substrate, but is a function of the film thickness.