In this paper we have reported the observation of visible photoluminescence (PL) and cathodoluminescence (CL) of Pr implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100 deg C in NH_3, N_2, Ar_2, and in forming gas N_2+H_2, at atmospheric pressure to recover implantation damages and activate the rate earth ions, The sharp characteristic emission lines corresponding to Pr~(3+) intra-4f~n-shell transitions are resolved in the spectral range from 350 nm to 1150 nm, and observed over the temperature range of 12 K-335 K. The PL and CL decay kinetics measurement was performed for ~3P_1, ~3P_0 and ~1D_2 levels.
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