In this paper we have reported the observation of visible photoluminescence (PL) and cathodoluminescence (CU) of Pr implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100°C in NH{sub}3, N{sub}2, Ar{sub}2, and in forming gas N{sub}2＋H{sub}2, at atmospheric pressure to recover implantation damages and activate the rare earth ions. The sharp characteristic emission lines corresponding to Pr{sup}(3+) intra-4f{sup}n -shell transitions are resolved in the spectral range from 350 am to 1150nm, and observed over the temperature range of 12 K-335 K. The PL and CL decay kinetics measurement was performed for 3{sup left}P{sub}1, 3{sup left}P{sub}0 and 1{sup left}D{sub}2 levels.
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机译：本文据报道，观察GaN中植入的PR的可见光致发光（PL）和阴极发光（Cu）。将植入的样品在NH {Sub} 3，N {Sub} 2，AR {Sub} 2中的1100℃的温度下给予同胞热退火处理，以及形成气体N {Sub} 2 + H {Sub} 2。恢复植入损伤并激活稀土离子的大气压。对应于Pr {sup}（3+）的尖锐特征发射线，4f {sup} n -shell转换在350m至1150nm的光谱范围内被解析，并且在12k-335k的温度范围内观察到。对3 {sup left} p {sub} 1,3 {sup left} p {sub} 0和1 {sup left} d {sub} 2级别进行了PL和CL衰减动力学测量。
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