The formation of in-rich regions at the perphery of the inverted hexahonal pits of InGaN thin-films grown by metaloranic vapor phase epitaxy

摘要

InGaN thin films were grwn by low-pressure metalorganic-vaor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surface. Room temperature CL at the wavelenths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In-rich regions fromed at the periphery of the hexagonal pits.