SESO memory: a CMOS compatible high density embedded memory technology for mobile applications

摘要

SESO memory is proposed as a high density, low power embedded memory. Based on an ultra-low leakage thin-film transistor fabricated with standard CMOS logic techniques, this embedded memory has a density almost three times larger than SRAM and requires no additional processing materials. Fabricated SESO transistor characteristics are presented and a 3-transistor cell structure is analyzed, showing SESO memory to be a strong candidate as an inexpensive embedded memory.