Low bias voltage dry etching of InP by inductively coupled plasma (ICP) using SiCl/sub 4//Ar

摘要

We report on anisotropic and smooth etching of InP by low bias voltage ICP using SiCl/sub 4/-Ar at high substrate temperature. We used an inductively coupled plasma (ICP) scanning electron microscope (SEM) photograph of circular array patterns of InP. The etching mask was a negative-type electron beam resist SAL601.