Microwave power performance of InP-based double heterojunction bipolar transistors for C- and X-band applications

摘要

We report on the microwave performance of InP-based double heterojunction bipolar transistors (DHBT) for X-band and C-band applications with power cells operating at an output power greater than 2 W. Our power performance characterization indicated a combination of high power density and high efficiency at both 4.5 and 9 GHz. At 4.5 GHz we measured over 2 W output power (4.3 W/mm power density) and a peak power-added-efficiency (PAE) of 60%. AT 9 GHz the peak measured power was over 1 W (5 W/mm) and the peak PAE was 60%. These are the first reports of substantial microwave power performance in this new device technology based on the InP material system.