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Microwave heterojunction bipolar transistors suitable for low- power, low- noise and high-power applications and method for fabricating same
Microwave heterojunction bipolar transistors suitable for low- power, low- noise and high-power applications and method for fabricating same
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机译:适用于低功率,低噪声和高功率应用的微波异质结双极晶体管及其制造方法
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摘要
Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter 108, a base 126 and a collector 24 is disclosed, wherein the base 126 is composed of one or more islands 126 of semiconductor material. The one or more islands 126 are formed so that they do not cross any boundaries of the active area 60 of the transistor.PPOther devices, systems and methods are also disclosed.
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