Microwave heterojunction bipolar transistors suitable for low- power, low- noise, and high-power applications

摘要

Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter, a base 50 and a collector 70 is disclosed, wherein the emitter composed of one or more islands 30 of semiconductor material having a wider energy bandgap than the base 50. The islands 30 are formed so that they do not cross any boundaries of the active area 60 of the transistor.PPOther devices, systems and methods are also disclosed.