X-band, high performance, SiGe-heterojunction bipolar transistors-low noise amplifier for phased array radar applications

摘要

This study presents an X-band low noise amplifier (LNA) implemented in 0.25 ;C;m SiGe BiCMOS process aiming for phased array radar applications. The LNA is composed of two cascode stages using SiGe heterojunction bipolar transistors to achieve low noise figure, high gain and a better matching to 50 :9; at the input and output, simultaneously. The first stage is designed for low noise performance whereas the second stage is optimised to improve the input third-order intercept point (IIP3). The LNA resulted in a measured gain of 21 dB, a noise figure of 1.52 dB and an IIP3 of -8 dBm at 10 GHz. The active chip area without pads is 620 ?? 820 ;C;2 and the power dissipation is 22 mW from a 2.2 V power supply. These performance parameters collectively constitute the best figure-of-merit value of 101, reported in similar technologies.